a p05g120nsw-hf advanced power n-channel insulated gate electronics corp. features v ces high speed switching npt technology rohs compliant & halogen-free absolute maximum ratings , 1/8" from case for 5 seconds . notes: 1.pulse width limited by max . junction temperature . thermal data symbol rthj-c(igbt) rthj-c(diode) rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 500 na i ces --1ma v ce(sat) - 2 2.7 v - 2.5 - v v ge(th) 3.5 - 8 v q g -3353 nc q ge - 6.5 - nc q gc - 16.5 - nc t d(on) -8- ns t r -20- ns t d(off) -50- ns t f - 400 800 ns e on - 0.7 - mj e off - 1.1 - mj c ies - 690 1100 pf c oes -65- pf c res -9- pf symbol min. typ. max. units v f - 2.5 3.2 v t rr -70- ns q rr - 170 - nc data and specifications subject to change without notice 1 1200v parameter test conditions 201205151 halogen-free product a 300 /w /w thermal resistance junction-case v ge =15v units bipolar transistor with frd. test conditions i c =5a v ge =15v, i c =5a v ce =1200v, v ge =0v thermal resistance junction-ambient total gate charge parameter v ce =v ge , i c =10ma rating units v 1200 10.5a i c v a a a /w a 125 8 42 w value 40 40 1 thermal resistance junction-case p d @t c =25 t j 2 t l -55 to 150 electrical characteristics of diode@t j =25 (unless otherwise specified) v cc =960v, i c =5a, v ge =15v, r g =22 , inductive load rise time turn-off delay time fall time f=1.0mhz v ge =0v reverse transfer capacitance v ce =30v input capacitance operating junction temperature range t stg v ge =+ 30v, v ce =0v v cc =600v -55 to 150 reverse recovery charge di/dt = 100 a/s forward voltage i f =8a reverse recovery time i f =8a + 30 10.5 21 pulsed collector current 1 gate-emitter voltage collector current v ge =15v, i c =10a symbol v ces i cm i c @t c =100 v ge i c @t c =25 i f @t c =100 i fm diode forward current output capacitance turn-on delay time gate-collector charge gate-emitter charge turn-on switching loss turn-off switching loss gate threshold voltage collector-emitter saturation voltage collector-emitter leakage current gate-to-emitter leakage current parameter parameter maximum lead temp. for soldering purposes collector current collector-emitter voltage diode pulse forward current storage temperature range maximum power dissipation g c e to-3p
ap05g120nsw-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature fig 5. gate threshold voltage fig 6. typical capacitance characterisitics v.s. junction temperature 2 0 10 20 30 40 02468 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 0 10 20 30 40 0246810 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v 1 2 3 4 5 6 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =20a i c =15a v ge =15v 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) t c =150 o c 0 10 20 30 40 0246810 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 0 100 200 300 400 500 600 700 800 900 1000 1 5 9 13 17 21 25 29 33 37 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 i c =10ma i c =5a i c =10a
a p05g120nsw-hf fig 7. soa characteristics fig 8. effective transient thermal impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig11. forward characteristic of fig 12. gate charge characterisitics diode 3 0 4 8 12 16 0 10203040 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =5a v cc =600v 0 4 8 12 16 20 048121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c = 20a i c =10a i c =5a t c =25 o c 0 4 8 12 16 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) t c = 150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 0 0.8 1.6 2.4 3.2 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c i c =20a i c =10a i c =5a 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 v ce ,collector - emitter voltage(v) i c ,collctor current(a) t c =25 o c single pulse 10us 100us 1ms 10ms
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